Three-dimensional modelling of scattering loss in InGaAsP/InP and silica-on-silicon bent waveguides

C. Ciminelli; V. M. N. Passaro; F. Dell'Olio; M. N. Armenise

doi:10.2971/jeos.2009.09015

Journal of the European Optical Society - Rapid publications, Vol 4 (2009)

Three-dimensional modelling of scattering loss in InGaAsP/InP and silica-on-silicon bent waveguides

C. Ciminelli, V. M. N. Passaro, F. Dell'Olio, M. N. Armenise

Abstract

A three-dimensional (3D) method for the estimation of scattering loss due to sidewalls roughness in bent optical waveguides is proposed and validated. The approach, based on Volume Current Method (VCM), has been pointed out to accurately calculate the scattering loss as dependent on curvature radius and wavelength. An exponential model has been employed to analytically describe the sidewalls roughness and a 3D mode solver based on mode-matching method has been used to calculate optical field distribution in the bent waveguide cross-section. Scattering loss suffered by two low index contrast waveguides has been investigated by the developed algorithm. For a buried InGaAsP/InP waveguide and a 6 Î¼m x 6 Î¼m Silica-on-Silicon guiding structure scattering loss dependence on bending radius, wavelength, roughness, correlation length and standard deviation has been investigated and discussed. Because of the different index contrast values, InGaAsP/InP waveguide exhibits a scattering loss which is quite six times larger than in Silica-on-Silicon. For both guiding structures, quasi-TM mode shows a larger scattering loss than quasi-TE one.

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