Electro-optical modulating multistack device based on the CMOS-compatible technology of amorphous silicon

S. Rao; F. G. Della Corte

doi:10.2971/jeos.2010.10040s

Journal of the European Optical Society - Rapid publications, Vol 5 (2010)

Electro-optical modulating multistack device based on the CMOS-compatible technology of amorphous silicon

S. Rao, F. G. Della Corte

Abstract

In this paper we report results on a field-effect induced light modulation at Î» = 1.55 um in a high-index-contrast waveguide based on a multisilicon-on-insulator (MSOI) platform. The device is realized with the hydrogenated amorphous silicon (Î±-Si:H) technology and it is suitable for monolithic integration in a CMOS Integrated Circuit. The device exploits the free carrier optical absorption electrically induced in the semiconductor core waveguide. The dynamic behaviour of the device was experimentally and theoretically analyzed in presence of a visible illumination showing a link between the photogeneration and the free carriers provided by doped Î±-Si:H layers.
The core waveguide contains several thin dielectric films of amorphous silicon carbonitride (Î±-SiCN) embedded along its thickness highly enhancing the absorbing action of the modulator held in the on-state.

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