(lnP)5/(Ga0.47 In0.53 As)5 superlattice confined 1.5 Âµm multiquantum well laser  grown by all- solid source atomic layer molecular beam epitaxy

M. L. Dotor; P. Huertas; P. A. Postigo; D. Golmayo; F. Briones

doi:10.2971/jeos.2010.10049s

Journal of the European Optical Society - Rapid publications, Vol 5 (2010)

(lnP)5/(Ga0.47 In0.53 As)5 superlattice confined 1.5 Âµm multiquantum well laser grown by all- solid source atomic layer molecular beam epitaxy

M. L. Dotor, P. Huertas, P. A. Postigo, D. Golmayo, F. Briones

Abstract

Room temperature laser emission near 1.55Âµm is obtained in compressive strained multiquantum well separate confinement heterostructure grown at 340Â°C by all-solid source Atomic Layer Molecular Beam Epitaxy , where (lnP)5/(Ga0.47 In0.53 As)5, lattice-matched short period superlattices have been used as pseudoquaternary barrier to confine Ga0.27 In0.73 As wells . These preliminary results show that solid source Atomic Layer Molecular Beam Epitaxy is well adapted to fabricate advanced optoelectronic components including pseudoquaternary material.

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