Enhancement of photodetector responsivity in standard SOI CMOS processes by introducing resonant grating structures

M. Auer; K.-H. Brenner

doi:10.2971/jeos.2011.11014s

Journal of the European Optical Society - Rapid publications, Vol 6 (2011)

Enhancement of photodetector responsivity in standard SOI CMOS processes by introducing resonant grating structures

M. Auer, K.-H. Brenner

Abstract

A new photodetector concept is described which is fully compatible with the standard SOI CMOS process and does not require any post-processing steps. Our simulations are based on two-dimensional RCWA (Rigorous Coupled Wave Analysis) and local absorption theory (K.-H.Brenner, "Aspects for calculating local absorption with the rigorous coupled-wave method" Optic Express 2010, accepted). The simulations show that optimized lateral grating structures are able to enhance the absorption efficiency of thin semi-conductor detectors by a factor of 32 compared to nonenhanced approaches.

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References

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